Optical Characterization of H-Free a-Si Layers Grown by rf-Magnetron Sputtering by Inverse Synthesis Using Matlab: Tauc–Lorentz–Urbach Parameterization

Several, nearly-1-µm-thick, pure, unhydrogenated amorphous-silicon (a-Si) thin layers were grown at high rates by non-equilibrium rf-magnetron Ar-plasma sputtering (RFMS) onto room-temperature low-cost glass substrates. A new approach is employed for the optical characterization of thin-layer samples, which based on some formulae normal-incidence transmission such a samples and adoption inverse-synthesis method, using devised Matlab GUI environment. The so-far existing limiting value thickness-non-uniformity parameter, ?d, when optically characterizing wedge-shaped layers, has been suppressed with introduction appropriate corrections in expression transmittance. responses H-free RFMS-a-Si films investigated, successfully parameterized single, Kramers–Krönig (KK)-consistent, Tauc–Lorentz oscillator model, inclusion model Urbach tail (TLUC), present case non-hydrogenated a-Si films. We have also Wemple–DiDomenico (WDD) single-oscillator to calculate two WDD dispersion parameters, energy, Ed, Eso. amorphous-to-crystalline mass-density ratio Ed suggested Wemple DiDomenico key factor understanding refractive index behavior under study. porosity specific deposition conditions this work, an Ar-pressure ~4.4 Pa, found be approximately 21%. Additionally, it must concluded that adopted TLUC parameterization highly accurate evaluation UV/visible/NIR transmittance measurements, investigated. Finally, performed experiments are needed more confidence quick optical-characterizations techniques, order find applications optics optoelectronics.